page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd . fe a tures ? high h fe ? complem e n t a r y to k t a15 0 5 maximum ratings ( ta=25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 3 5 v collector - emitter v ol t age v ceo 3 0 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 0 .5 a collector power dissi p ation p c 0 .2 w junction t empe r ature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherwise specified ) par a met e r symbol t est conditions m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a, i e =0 35 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma, i b =0 30 v emitter - ba s e breakd o w n v o l t age v ebo i e = 10 0 a, i c =0 5 v collector cut - off current i cbo v cb = 35 v , i e =0 0.1 u a emitter cut - off current i ebo v eb = 5 v , i c =0 0.1 u a dc cur r ent gain h fe1 v ce =1 v , i c = 100ma 70 400 h fe2 v ce =6 v , i c = 400ma o y 25 40 collecto r - emitter satu r ation v o l t age v ce (sat) i c =100ma, i b = 10ma 0.25 v base - e mitter v ol t age v be v ce =1 v , i b = 100ma 1 v t r a n s ition fr e qu e n c y f t v ce = 6 v , i c =20ma 300 mhz collector output ca p aci t ance c ob v cb = 6 v ,i e = 0 , f=1 mh z 7 pf classification of h fe rank o y g range 70 - 1 40 120 - 240 200 - 400 marking wo wy wg k t c3876 ( n p n ) 1. base 2. emitter sot - 23 3. collecto
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd . k t c3876 typical characteristics
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